Organometallic photoresists and development methods

Inventor: Feng Lu

Patent Publication Number: US 20240295811 A1

Publication date: 2024-09-05

Access Link: USPTO

Abstract

Organometallic photoresists and development methods, particularly organometallic tin photoresists for extreme ultraviolet radiation (EUV) patterning and development methods, are described. The radiation sensitive organometallic photoresists R M,L include Sn, In, Sb, Bi, Mn, V, Ti, Cr, Se, Te, Zr, Hf, Ga, or Ge compounds, wherein R is a substituted or unsubstituted cycloalkenyl group with 3 to 20 carbon atoms; L is ligand; a, b, c≥1. The development methods for photolithography patterning comprise sublimation and vaporization under ambient vacuum and temperature.