EUV Photoresist

Organometallic compounds, particularly organometallic tin (organotin) compounds, have high EUV light absorption because metals have high absorption capacity of EUV radiation, and then can be used as EUV photoresists and/or precursors for photolithography at smaller level (e.g. < 7 nm). As promising advanced materials, organometallic tin compounds, particularly containing unsaturated conjugated group (e.g. cyclopentadienyl) with stronger UV absorption, can provide photoresist patterning with significant advantages such as improved resolution, sensitivity, etch resistance, lower line width/edge roughness without pattern collapse, and energy-saving at lower cost, compared to conventional organic EUV photoresist, or inorganic EUV photoresist.

Patents

Organotin polymer photoresist composition for photolithography patterning

Organotin polymer photoresist composition for photolithography patterning

Organotin photoresist composition for photolithography patterning

Organotin photoresist composition for photolithography patterning

Organotin photoresist composition for photolithography patterning

Organotin photoresist composition for photolithography patterning

Organotin photoresist composition and method of stabilization

Organotin photoresist composition and method of stabilization

Organotin photoresist composition and method of forming photolithography pattern

Organotin photoresist composition and method of forming photolithography pattern

Organotin photoresists and method of developing photolithography pattern

Organotin photoresists and method of developing photolithography pattern

Inventor: Feng Lu

Publication date: 2025/1/16

Pub. number: WO 2025/014674 A1

Inventor: Feng Lu

Publication date: 2025/1/16

Pub. number: US 2025/0020996 A1

Inventor: Feng Lu

Publication date: 2025/2/13

Pub. number: US 2025/0053085 A1

Inventor: Feng Lu

Publication date: 2025/2/20

Pub. number: WO 2025/038394 A2

Inventor: Feng Lu

Publication date: 2025/2/20

Pub. number: US 2025/0060666 A1

Inventor: Feng Lu

Publication date: 2025/2/27

Pub. number: WO 2025/042752 A2

Inventor: Feng Lu

Publication date: 2025/3/6

Pub. number: US 2025/0076755 A1

Inventor: Feng Lu

Publication date: 2025/3/6

Pub. number: WO 2025/049415 A2

Inventor: Feng Lu

Publication date: 2025/1/30

Pub. number: WO 2025/024290 A1

Inventor: Feng Lu

Publication date: 2025/3/27

Pub. number: US 2025/0102908 A1

Inventor: Feng Lu

Publication date: 2025/6/12

Pub. number: WO 2025/122452 A1

Inventor: Feng Lu

Publication date: 2025/6/12

Pub. number: US 2025/0189886 A1

Organometallic tin compounds as EUV photoresist

Inventor: Feng Lu

Date of Patent: 2025/1/14

Patent number: US 12,195,487 B2

Organotin photoresist composition and method of stabilization

Inventor: Feng Lu

Publication date: 2024/11/14

Pub. number: US 2024/0377729 A1

Organotin photoresist composition and method of stabilization

Inventor: Feng Lu

Publication date: 2024/11/14

Pub. number: WO 2024/233871 A1

Organotin cluster photoresists and stabilization methods

Inventor: Feng Lu

Publication date: 2024/10/24

Patent number: US 2024/0353752 A1

Organometallic photoresists and development methods

Inventor: Feng Lu

Publication date: 2024/9/5

Pub. number: US 2024/0295811 A1

Organometallic tin clusters as EUV photoresist

Inventor: Feng Lu

Publication date: 2024/4/25

Pub. number: US 2024/0134275 A1

Organometallic tin compounds as EUV photoresist

Inventor: Feng Lu

Date of Patent: 2023/11/28

Patent number: US 11,827,659 B2