Organotin photoresist composition and method of forming photolithography pattern

Inventor: Feng Lu

Patent Publication Number: US 20250102908

Publication date: 2025-03-27

Access Link: USPTO

Patent Publication Number: WO2025024290

Publication date: 2025-01-30

Access Link: WIPO

Abstract

An organotin photoresist composition and a method of forming photolithography pattern are described. The organotin photoresist composition comprises a bridged-(stannocenyl)tin compound, a solvent, and/or an additive. Stannocenyl comprises bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin, wherein cyclopentadienyl is cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R, C5H2R2, C5HR3, or C5R4 group. A method of forming the pattern comprises: depositing bridged-(stannocenyl)tin compound photoresist over a substrate to form a photoresist layer, exposing the photoresist layer to actinic radiation to form a latent pattern, and then developing to form photolithography pattern.