Organotin photoresist composition for photolithography patterning

Inventor: Feng Lu

Patent Publication Number: US 20250060666

Publication date: 2025-02-20

Access Link: USPTO

Patent Publication Number: WO2025042752

Publication date: 2025-02-27

Access Link: WIPO

Abstract

An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (cyclopentadienyl)tin compound, a solvent, and/or an additive. (Cyclopentadienyl)tin compound comprises cyclopentadienyl, or substituted cyclopentadienyl C5H4R, C5H3R2, C5H2R3, C5HR4, or C5R5 group, wherein R is H, a substituted or unsubstituted alkyl, alkenyl, alkynyl, cycloalkyl, or cycloalkenyl group with 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group with 6-20 carbon atoms, or an amino, cyano, ether, ester, halide, nitro, silyl, thiol, or carbonyl group.