Organotin photoresist composition for photolithography patterning

Inventor: Feng Lu

Patent Publication Number: US 20250076755 A1

Publication date: 2025-03-06

Access Link: USPTO

Patent Publication Number: WO2025049415

Publication date: 2025-03-06

Access Link: WIPO

Abstract

An organotin photoresist composition for photolithography patterning is described, wherein organotin photoresist composition comprises a (stannocenyl oxide)tin compound, a solvent, and/or an additive. (Stannocenyl oxide)tin compound comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H4R, C5H3R2, C5H2R3, C5HR4, or C5R5 group. A method for photolithography patterning comprises depositing (stannocenyl oxide)tin compound photoresist composition over a substrate to form a photoresist layer; exposing the (stannocenyl oxide)tin photoresist layer to actinic radiation to form a latent pattern; and developing the latent pattern by applying a developer to remove the unexposed or exposed portion of photoresists to form a photolithography pattern.