Organotin photoresists and method of developing photolithography pattern

Inventor: Feng Lu

Patent Publication Number: US 20250020996 A1

Publication date: 2025-01-16

Access Link: USPTO

Patent Publication Number: WO2025014674 A1

Publication date: 2025-01-16

Access Link: WIPO

Abstract

The present invention relates to organotin photoresists and method of developing photolithography pattern; wherein organotin photoresists comprise (stannocenyl)tin compounds. Stannocenyl is bis(cyclopentadienyl)tin, or substituted bis(cyclopentadienyl)tin, wherein cyclopentadienyl comprises cyclopentadienyl C5H5 group, or substituted cyclopentadienyl C5H3R, C5H2R2, C5HR3, C5R4, or C5R5 group. Method of developing photolithography pattern comprises sublimation or vaporization.