Organotin polymer photoresist composition for photolithography patterning

Inventor: Feng Lu

Patent Publication Number: US 20250189886 A1

Publication date: 2025-06-12

Access Link: USPTO

Patent Publication Number: WO2025122452

Publication date: 2025-06-12

Access Link: WIPO

Abstract

An organotin polymer photoresist composition for photolithography patterning is described, wherein organotin polymer photoresist composition comprises an organotin polymer, a solvent, and/or an additive. Organotin polymer comprises cyclopentadienyl group, wherein cyclopentadienyl comprises cyclopentadienyl C3H3 group, or substituted cyclopentadienyl C₂H3R, C3H2R2, CHR3, C3R4, or CRs group, wherein R is H, a substituted or unsubstituted alkyl, alkenyl, alkynyl, or cycloalkyl group with 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group with 6-20 carbon atoms, or an amino, cyano, ether, ester, halide, nitro, silyl, thiol, or carbonyl group.